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Materials and Devices Engineering and Management ^#

Table of Contents - Detailed Version 

Wide range of materials and devices used 

Materials and devices at issue

Acting in an advisory, problem-solving support and training capacity   

^# see also Page “Originalities” about “Issue Resolution through Innovative Experiments on Materials and Devices”.

§       Wide range of materials and devices used for

×   Development of state-of-the-art device products.

×   Innovation of new device structures. 

×   Speciality experiments and measurements for base-lining fundamental materials and devices properties.

§       Materials and devices at issue

×   Materials –

Comprising semiconductor wafers, thin epitaxially grown layers / quantum structures, mirror reflectivity / passivation coatings and conventional superconductors.

›      Semiconductor wafers – III/V compounds GaAs, InP and silicon; semi-insulating, conducting.

›      MBE-, MOVPE-grown GaAs, InP, AlAs, GaN, AlGaAs, InGaAs, InGaP, AlGaInP, InGaAsP single layers and heterostructures.

›      Ion-implanted and annealed GaAs, Si.

›      Quantum well structures – lattice-matched, strained.

›      Laser mirror coatings – antireflective and high reflectivity.

›      Conventional superconductors – Sn, Nb, Pb-alloys.

×   Optical Devices –

With strong emphasis on wide range of laser diodes, including non-absorbing mirror concepts. 

›      Quantum well lasers.

-      Ridge waveguide, buried-heterostructure types.

-      670-nm GaInP/AlGaInP. 830-nm GaAs/AlGaAs. 980-nm InGaAs/AlGaAs. 1.3-µm InGaAsP/InP.

›      High power 980-nm InGaAs/AlGaAs QW pump lasers with ultra-high reliability.

-      For pumping erbium doped fibre amplifiers in submarine optical communications systems.

›      Non-absorbing mirrors.

-      Intermixing of GaAs/AlGaAs quantum wells by ion implantation and subsequent annealing.

-      Kinked active waveguide structure.

›      Light-emitting diodes.

›      Electro-absorption modulators.

›      Mode expanders.

›      For world’s-first reports on effects of laser facet / cavity temperatures, stress, semiconductor material instabilities, facet coating material recrystallization and respective correlations to laser reliability, see:

Page “Originalities” about “Issue Resolution through Innovative Experiments on Materials and Devices. Semiconductors”.

›      For special reports on optical devices, see:

Page “Deliverables” about “Consulting Deliverables”, Reference Documents.

×   Electrical Devices –

Including field-effect transistors, resonant tunnelling diodes, CMOS ICs, superconducting tunnel junctions and integrated circuits.

›      GaAs field-effect transistors, MESFET.

›      Resonant tunnelling diodes, RTD.

-      State-of-the-art peak-to-valley current ratios of up to 25 for InGaAs/AlAs devices.

›      Silicon CMOS integrated circuits.

›      Superconducting tunnel junctions and integrated circuits.

›      For detailed description of world-first detection of significant effects, see:

Page “Originalities” about “Issue Resolution through Innovative Experiments on Materials and Devices”.

›      For selected expert reports, see:  

Page “Deliverables” about “Consulting Deliverables”, Extensive Reports.

§       Acting in an advisory, problem-solving support and training capacity

×   Materials design, device design and modelling of semiconductor and superconductor devices:

›      Materials, including: Semiconductor wafers – III/V compounds GaAs, InP, Si. MBE- and MOVPE-grown III/V binary, ternary, quaternary alloy layers and heterostructures. Ion-implanted GaAs, Si. Quantum well structures – lattice-matched, strained. Laser mirror passivation, coatings. Conventional superconductors – Sn, Nb, Pb-alloys.

›      Devices, including: Quantum well laser diodes 670 – 1300nm. Non-absorbing mirrors. Light-emitting diodes. Electro-absorption modulators. Mode expanders. Resonant tunnelling diodes. MESFETs and MOSFETS. Superconducting tunnel junctions and circuits.

›      Use of software packages such as, ASTAP, BeamPROP, PICS3D, LASTIP, Matlab to model electrical, optical, thermal device characteristics.

×   Optimization of product functionality by using information from custom-designed speciality experiments.

›      Measurements include parameters such as: Semiconductor wafer quality uniformity. Laser mirror temperatures. Temperatures along laser cavity. Temperature-monitored laser degradation. Mechanical stress. Stress-induced defects. Deep traps / impurity identification, concentration and location. Contaminant mapping. Chemical and elemental analysis. Impurity trapping in quantum well lasers. Interface quality. Lattice disorder in laser facets. Laser mirror coating material instability. Silicon recrystallization effects. Magnetic penetration depths in thin superconducting films. Spatial uniformity of superconducting tunnel junction barrier.

×   Correlations between material properties and relevant device parameters to enhance device quality.

›      Examples include: Triple correlation between structural / compositional disorder in laser mirrors, laser mirror temperatures and catastrophic optical mirror damage level. Correlations between local stress, defect concentration, electron-beam-induced-current signal and strength of susceptibility to local laser degradation. Correlations between tunnel barrier uniformity and optimum performance of Josephson tunnel junctions used in superconducting driver and memory circuits.

×   Device engineering through optimized product and process design including wafer growth and manufacturing.

×   Reliability qualifications including setting up test programs and failure analysis strategies as required.

›      Programs comprise step stress tests, accelerated life tests (current, optical power, temperature, humidity), burn-in, environmental stress tests, temperature cycling, high temperature storage life, moisture sensitivity assessment level, electrostatic discharge and latch-up tests.

›      Failure analyses include techniques and tools such as optical microscopy, electron microscopies (SEM, TEM), scanning acoustic microscopy, light emission microscopy, liquid crystal thermography, photoluminescence spectroscopy and scanning, electroluminescence, Raman spectroscopy, optical absorption spectroscopy, thermoreflectance, deep-level transient spectroscopy, x-ray energy dispersive spectroscopy, electron-beam induced current.

 

 

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